4 edition of Optical Effects of Ion Implantation (Cambridge Studies in Modern Optics) found in the catalog.
May 18, 2006
by Cambridge University Press
Written in English
|The Physical Object|
|Number of Pages||294|
We have shown single‐mode surface optical waveguiding in lithium‐ion‐implanted fused quartz, and multimode buried waveguiding in argon‐ and lithium‐ion‐implanted fused quartz. Guide losses are obse. The samples were fabricated by ion implantation and subsequent annealing. After annealing, a photoluminescence band below eV has been observed. The peak energy of the photoluminescence is found to be almost independent of annealing time, while the intensity of the luminescence increases as the annealing time increases.
Abstract: Impurity ions (H+, He+, B+, O+, A+, Kr+, and Xe+) have been implanted in high-purity vitreous silica and their production of and interaction with implantation damage was studied by optical absorption techniques. An absorption band at nm (B2-band) is produced by all ions except H+. The implantation of H+ greatly reduces the B2-band absorption intensity produced either by prior or. Townsend, P D and Nunn, P J T () Chapter 5 Optical effects of ion implantation. In: Knystautas, Emile (ed.) Engineering thin films and nanostructures with ion beams. Taylor and Francis (Boca Raton. ISBN Full text not available from this repository.
of those bombarding ions into the structure of the material, i.e. ion implantation. Ion implantation occurs mostly near the end of the ion trajectory when the ion energy has decreased below ~10 keV/amu, where the nuclea r stopping power is dominant. In many of the earlier works dealing with the preparation of optical waveguides using ion beams. Microstructure and optical effects of buried nano-cavities formed in silicon by hydrogen ion implantation Abstract: The formation of nano-cavities in silicon, induced by hydrogen implantation, has been studied by Rutherford Back-Scattering Channeling (RBS/C), Atomic Force Microscope (AFM) and infrared reflection spectra (IR).
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Optical effects of ion implantation P. Townsend, P. Chandler, L. Zhang This book is the first to give a detailed description of the factors and processes that govern the optical properties of ion implanted materials, as well as an overview of the variety of devices that can be produced in this way.
This book is the first to give a detailed description of the factors and processes which govern the optical properties of ion implanted materials.
It will provide a comprehensive overview of this important technique, used in the fabrication of a wide range of optical by: Buy Optical Effects of Ion Implantation (Cambridge Studies in Modern Optics) on FREE SHIPPING on qualified orders Optical Effects of Ion Implantation (Cambridge Studies in Modern Optics): Townsend, P.
D., Chandler, P. J., Zhang, L.: : Books. This book is the first to give a detailed description of the factors and processes that govern the optical properties of ion implanted materials, as well as an overview of the variety of devices that can be produced in this way.
Beginning with an overview of the basic physics and practical methods involved in ion implantation, the topics of optical absorption and luminescence are then by: Optical effects of ion implantation.
[P D Townsend; P J Chandler; L Zhang] Home. WorldCat Home About WorldCat Help. Search. Search for Library Items Search for Lists Search for This book is the first to give a detailed Optical Effects of Ion Implantation book of the factors and processes which govern the optical properties of ion implanted materials.
OPTICAL EFFECTS OF ION IMPLANTATION A has an index only slightly less than that of the unimplanted region C. Formation of the structure shown in Fig. lb is a simple extension of the same approach, and any ions may be used for this purpose, but to form the damage layer B without damage to region A requires an understanding of the mechanism.
Ion implantation is a powerful technique for surface analysis and material modification and this review discusses the effects that specifically relate to optical properties of insulators. Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target.
Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions.
Book chapter Full text access 6 - The Application of Ion Implantation to Aqueous Corrosion. ASHWORTH, R.P.M. PROCTER, W.A. GRANT. Pages 11 - Optical Effects of Ion Implantation. P.D. TOWNSEND, S.
VALETTE. Pages Download PDF. Chapter preview. select article Subject Index. It also explores synthesis and the correlated optical effects of nanoparticles by ion beams, and features examples of successful micro- and nano-photonic devices.
Given its breadth of coverage, the book will particularly appeal to readers interested in ion-beam technology, materials science, and integrated optics.
Nitrogen ion implantation caused the reduction in the optical band gap of the films revealing the formation of defect levels. The structure of the virgin and implanted films studied using the X. Townsend, P D, Chandler, P J, Zhang, L and Amekura, H () Optical effects of ion implantation (in Japanese).
Press Syndicate of CUP, Cambridge ISBN. FIG. RBS/C spectra showing the damage buildup for keV Cu ion bombardment of GaN at 20 °C with a beam flux of cm22 s Implantation doses ~in cm22) are indicated in the figure. - "Effect of ion species on the accumulation of ion-beam damage in GaN".
Добро пожаловать на сайт ИФТТ РАН. Raman spectroscopy and sheet resistance measurements were used to study the preparation processes of low-resistance p-type 4H-SiC by Al ion implantation with ion doses of ×10 ¹² - × Recent results on ion synthesis and nonlinear optical properties of metal nanoparticles in various dielectrics are presented.
Copper and silver nanoparticles were fabricated in silica and soda lime glasses by low energy ion implantation.
The nonlinear optical characteristics of nanoparticle composite materials, which may be suited for optical sensing, were studied by applying Z-scan. Ion Implantation: Science and Technology ionization laser lattice lens loops magnetic field mass material measurements metal method neutral Nucl nuclear stopping optical oxide parameters Phys plane plasma potential probe produced proton radiation range region regrowth sample scan scattering semiconductor sheet About Google.
Epitaxial layers of (Ga,Mn)As ferromagnetic semiconductor have been subjected to low-energy ion implantation by applying a very low fluence of either chemically active, oxygen ions or inactive ions of neon noble gas.
Several complementary characterization techniques have been used with the aim of studying the effect of ion implantation on the layer properties. Book: All Authors / Contributors: J K Hirvonen. Find more information about: ISBN: OCLC Number: / N.E.W. Hartley --Chemical properties of ion implanted materials / Gerhard K.
Wolf --Superconductivity / O. Meyer --Optical effects of ion implantation / P.D. Townsend and S. Valette. Akira Ueda, Richard R. Mu and Warren E. Collins (May 30th ). Annealing Effects on the Particle Formation and the Optical Response, Ion Implantation, Mark Goorsky, IntechOpen, DOI: / Available from.
Hayden et al. utilized optical lithography and ion implantation to produce an n-type/intrinsic/n-type junction in the silicon nanowires. With the n-doped substrate under the silicon oxide layer as the global back gate, metal oxide semiconductor FET was finished by ion implantation and optical lithography (details in Figure 8).
Figure 2. Welding of carbon nanotubes by keV ion implantation . Recently, a low-energy FIB system has been developed for controlled three-dimensional (3D) micromachining and fabricates ultra-modern micro and nanodevices used in different applications .Either this system can be used for precise doping in nanoscale regime or implant in few atoms in biological samples for DNA .Defects after ion implantation Amorphization by ion implantation and subsequent defect annealing can easily be studied by RBS amorphous layer near surface •elastic scattering from surface provides maximum energy of observed ions •is not equal to maximum energy of probe ion (often H+ or He+) due to collision law crystalline bulk of sample.